Prof. Dr. MUHİTDİN AHMETOĞLU

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Simple and cost-effective wavelength measurement system using photodiode pair: Applications in fiber coupled light sources

AHMETOĞLU M., HACIİSMAİLOĞLU M. C., Kumbay E.

Measurement: Journal of the International Measurement Confederation , cilt.244, 2025 (SCI-Expanded)

Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development

Olkun A., Kaplan H. K., Akay S. K., Ahmetoğlu M., Pat S., Erdogan N.

SENSORS AND ACTUATORS A-PHYSICAL , cilt.374, 2024 (SCI-Expanded)

A new prospect to measure the built-in potential for photodiodes

HACIİSMAİLOĞLU M. C., AHMETOĞLU M.

Materials Science and Engineering: B , cilt.298, 2023 (SCI-Expanded)

Electrical and optical properties of Schottky diodes fabricated by electrodeposition of Ni films on n-GaAs

HACIİSMAİLOĞLU M. C., AHMETOĞLU M., ŞAFAK HACIİSMAİLOĞLU M., ALPER M., Batmaz T.

Sensors and Actuators A: Physical , cilt.347, 2022 (SCI-Expanded) Sürdürülebilir Kalkınma

A novel self-powered filterless narrow-band near-infrared photodiode of Cu2S/Si p(+)-p isotype heterojunction device with very low visible light noise

Kaplan H. K., Akay S. K., Ahmetoğlu M.

APPLIED SURFACE SCIENCE , cilt.601, 2022 (SCI-Expanded)

Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2-2.3 mu m)

Kunitsyna E., Royz M. A., Andreev I. A., Grebenshchikova E. A., Pivovarova A. A., Ahmetoglu (Afrailov) M., et al.

SEMICONDUCTORS , cilt.54, ss.796-802, 2020 (SCI-Expanded)

Electrical and optical properties of photodiode structures formed by surface polymerization of P(Egdma-Vpca)-Swcnt films on n-si

Kirezli B., Gucuyener İ., Kara A., Kaplan H. K., Afrailov M.

JOURNAL OF MOLECULAR STRUCTURE , cilt.1198, 2019 (SCI-Expanded)

Electrical and optical properties of photodiode structures formed by surface polymerization of [P (EGDMA-VPCA)-SWCNT] films on n-GaAs

Kirezli B., Ahmetoglu (Afrailov) M., Kara A.

JOURNAL OF MOLECULAR STRUCTURE , cilt.1192, ss.258-263, 2019 (SCI-Expanded)

N+-GaSb / no-GaInAsSb / P+-GaSb type ii heterojunction photodiodes with low radiation damage

Ahmetoglu Afrailov M., Kirezli B., Kaynak G., Andreev I., Kunitsyna E., Mikhailova M., et al.

Optoelectronics and Advanced Materials, Rapid Communications , cilt.12, ss.517-520, 2018 (SCI-Expanded)

Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method

Kaplan H. K., Akay S. K., Ahmetoglu M.

SUPERLATTICES AND MICROSTRUCTURES , cilt.120, ss.402-409, 2018 (SCI-Expanded)

N-GaSb / no-GaInAsSb / P- GaSb Type II Heterojunction Photodiodes with Low Radiation Damage

Ahmetoğlu M., Kırazlı B., Kaynak G., Andreev I. A., Kunıtsyna E. V., Mıkhaılova M. P., et al.

Optoelectronics And Advanced Materials-Rapid Communications , ss.606-611, 2018 (SCI-Expanded)

The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc

Kaplan H. K., Sarsici S., Akay S. K., Ahmetoglu M.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.724, ss.543-548, 2017 (SCI-Expanded)

The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs schottky barrier diode

Ahmetoglu (Afrailov) M., Kirsoy A., Asimov A., Kucur B.

Optoelectronics and Advanced Materials, Rapid Communications , cilt.10, ss.825-830, 2016 (SCI-Expanded)

Electrical Properties Inorganic-on-Organic Hybrid GaAs/Graphene Oxide Schottky Barrier Diode

Ahmetoğlu M., Kırsoy A., Okutan M., Yakuphanoğlu F.

Optoelectronics And Advanced Materials-Rapid Communications , ss.108-114, 2016 (SCI-Expanded)

Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization

Ahmetoglu M., Kara A., Kucur B.

ACTA PHYSICA POLONICA A , cilt.130, sa.1, ss.206-208, 2016 (SCI-Expanded)

The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode

Asimov A., Ahmetoglu M., Kirsoy A., Ozer M., Yasin M.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , cilt.11, sa.2, ss.214-218, 2016 (SCI-Expanded)

Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode

Kucur B., Ahmetoglu M., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

ACTA PHYSICA POLONICA A , cilt.129, ss.767-769, 2016 (SCI-Expanded) Sürdürülebilir Kalkınma

The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode

Kirsoy A., Ahmetoglu (Afrailov) M., Asimov A., Kucur B.

ACTA PHYSICA POLONICA A , cilt.128, 2015 (SCI-Expanded)

Electrical and Optical Characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb Heterostructure Photodiode

Ahmetoglu M., Kucur B., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

ACTA PHYSICA POLONICA A , cilt.127, sa.4, ss.1007-1009, 2015 (SCI-Expanded) Sürdürülebilir Kalkınma

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

Kucur B., Ahmetoglu M., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

ACTA PHYSICA POLONICA A , cilt.125, sa.2, ss.411-413, 2014 (SCI-Expanded)

Electrical characteristics of Al/n-type GaAs schottky barrier diodes at room temperature

Asimov A., Ahmetoglu M., Kucur B., Gucuyener I.

Optoelectronics and Advanced Materials, Rapid Communications , cilt.8, ss.309-310, 2014 (SCI-Expanded)

The determination of electronic parameters of al/mdmo-ppv/p-si/al schottky diode by current-voltage characteristics

Asimov A., Ahmetoglu (Afrailov) M.

Optoelectronics and Advanced Materials, Rapid Communications , cilt.8, ss.975-979, 2014 (SCI-Expanded)

Gaussian Distribution of inhomogeneous barrier height in Au/n-GaP (100) Schottky barrier diodes

Ozer M., Guzel T., Asimov A., Ahmetoglu (Afrailov) M.

Journal of Optoelectronics and Advanced Materials , cilt.16, ss.606-611, 2014 (SCI-Expanded)

Determination of Carrier Concentrations in P-GaSb/n-InGaAsSb Type II Misaligned Heterojunctions by the Conductivity-Magnetic Field Dependence

AHMETOĞLU M., Kucur B.

SENSOR LETTERS , cilt.11, sa.1, ss.202-204, 2013 (SCI-Expanded)

The determination of series resistance and interface state density distributions of Au/p-type GaAs schottky barrier diodes

Asimov A., Ahmetoglu (Afrailova) M., Kucur B., Ozer M., Guzel T.

Optoelectronics and Advanced Materials, Rapid Communications , cilt.7, ss.490-493, 2013 (SCI-Expanded)

Electrical properties of GaAs-GaAlAs near infrared light emitting diodes

AHMETOĞLU M., Kucur B., GÜCÜYENER İ.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.6, ss.782-784, 2012 (SCI-Expanded)

Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m

Afrailov M.

THIN SOLID FILMS , cilt.520, sa.15, ss.5014-5017, 2012 (SCI-Expanded) Sürdürülebilir Kalkınma

Electrical properties of Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diodes formed by surface polymerization of Single Walled Carbon Nanotubes

AHMETOĞLU M., KARA A., TEKİN N., Beyaz S., KÖÇKAR H.

THIN SOLID FILMS , cilt.520, sa.6, ss.2106-2109, 2012 (SCI-Expanded)

Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m

Ahmetoglu (Afrailov) M., Andreev I. A., Kunitsyna E. V., Moiseev K. D., Mikhailova M. P., Yakovlev Y. P.

INFRARED PHYSICS & TECHNOLOGY , cilt.55, sa.1, ss.15-18, 2012 (SCI-Expanded)

The electrical characterization of electrodeposited Ni thin film on silicon: Schottky Barrier diodes

AHMETOĞLU M., Tekgul A., ALPER M., Kucur B.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.6, ss.304-306, 2012 (SCI-Expanded)

Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells

Kunitsyna E. V., Andreev I. A., Sherstnev V. V., L'vova T. V., Mikhailova M. P., Yakovlev Y. P., et al.

OPTICAL MATERIALS , cilt.32, sa.12, ss.1573-1577, 2010 (SCI-Expanded)

Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application

Ahmetoglu (Afrailov) M., Kucur B., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

INFRARED PHYSICS & TECHNOLOGY , cilt.53, sa.5, ss.399-403, 2010 (SCI-Expanded)

Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures

Ahmetoglu (Afrailov) M.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.4, ss.441-444, 2010 (SCI-Expanded)

Determination of the parameters for the back-to-back switched Schottky barrier structures

Ahmetoglu M., Akay S. K.

CURRENT APPLIED PHYSICS , cilt.10, sa.2, ss.652-654, 2010 (SCI-Expanded)

Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m

Afrailov M.

INFRARED PHYSICS & TECHNOLOGY , cilt.53, sa.1, ss.29-32, 2010 (SCI-Expanded)

TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD

Ahmetoglu (Afrailov) M., Kaynak G., Shamirzaev S., Gulyamov G., Gulyamov A., Dadamirzaev M. G., et al.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.23, sa.15, ss.3279-3285, 2009 (SCI-Expanded)

Photoelectrical properties of InP-InGaAsP heterojunction avalanche photodiodes

Ahmetoglu M., Ozer M., Kadirov O.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.6, ss.608-611, 2009 (SCI-Expanded)

Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes

Ahmetoglu (Afrailov) M.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.6, ss.604-607, 2009 (SCI-Expanded)

Electron-hole interaction in spherical quantum dots of nanoheterostructures

Ahmetoglu (Afrailov) M., Akay S. K., Boymatov P., Inoyatov S., Ahmedov O., Rahimov N., et al.

Optoelectronics and Advanced Materials, Rapid Communications , cilt.3, sa.3, ss.163-165, 2009 (SCI-Expanded)

Electrical Properties of Photodiodes Based on p-GaSb/p-GaInAsSb/N-GaAlAsSb Heterojunctions

Ahmetoglu M., Kaynak G., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

TECHNICAL PHYSICS LETTERS , cilt.34, sa.11, ss.937-940, 2008 (SCI-Expanded)

Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures

Ahmetoglu (Afrailov) M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.10, sa.10, ss.2507-2510, 2008 (SCI-Expanded)

Photocurrent amplification in a isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions

Ahmetoglu (Afrailov) M.

INFRARED PHYSICS & TECHNOLOGY , cilt.51, sa.6, ss.491-494, 2008 (SCI-Expanded)

Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes

Erturk K., HACIİSMAİLOĞLU M. C., Bektore Y., Ahmetoglu M.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.22, sa.14, ss.2309-2319, 2008 (SCI-Expanded)

Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition

Ahmetoglu M., Erturk K.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.10, sa.2, ss.298-301, 2008 (SCI-Expanded)

Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb

Ahmetoglu (Afrailov) M.

THIN SOLID FILMS , cilt.516, sa.6, ss.1227-1231, 2008 (SCI-Expanded)

Photoelectrical characteristic of isotype N+-GaSb / no-GaInAsSb / N+- GaAlAsSb type II heterojunctions

AHMETOĞLU M., ÖZER M. H., Kadirov O., Boydedayev S.

Journal of Optoelectronics and Advanced Materials , cilt.10, sa.10, ss.2511-2514, 2008 (SCI-Expanded)

Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m

Ahmetoglu M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.9, sa.11, ss.3567-3570, 2007 (SCI-Expanded)

Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition

Ahmetoglu (Afrailov) M., Alper M., Safak M., Erturk K., Gurpinar B., Kocak F., et al.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , sa.4, ss.818-821, 2007 (SCI-Expanded)

Avalanche photodiodes for electromagnetic calorimeters

Pilicer E., Kocak F., Tapan İ., Ahmetoglu (Afrailov) M.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , sa.1, ss.120-121, 2007 (SCI-Expanded) Sürdürülebilir Kalkınma

Electrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb type-II heterojunctions

Ahmetoglu M., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

SEMICONDUCTORS , cilt.41, sa.2, ss.150-154, 2007 (SCI-Expanded)

Electrical properties of n-Si /Cu Schottky diodes formed by electrodeposition

AHMETOĞLU M., ALPER M., Safak M., Erturk K., Gurpinar B., KOÇAK F., et al.

Journal of Optoelectronics and Advanced Materials , cilt.9, sa.4, ss.818-821, 2007 (SCI-Expanded)

Change in the resistance of the semiconductor in the variable deformation field

Ahmetoglu (Afrailov) M., Gulyamov G., Shamirzaev S. H., Gulyamov A. G., Dadamirzaev M. G., Aprailov N., et al.

ROMANIAN JOURNAL OF PHYSICS , cilt.52, ss.343-351, 2007 (SCI-Expanded)

Dark currents in the uncooled InAs / InAsSbP photodiodes for the spectral range 1.6 - 3.5 μm

AHMETOĞLU M.

Journal of Optoelectronics and Advanced Materials , cilt.9, sa.11, ss.3567-3570, 2007 (SCI-Expanded)

A ZnS-Si isotype heterojunction avalanche photodiode structure for scintillation light detection

Tapan İ., Ahmetoglu(Afrailov) M., Kocak F.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , sa.1, ss.268-271, 2006 (SCI-Expanded) Sürdürülebilir Kalkınma

Dark currents and impact ionization coefficients in the InP-InGaAsP double heterostructures

Ozer M., Ahmetoglu M., Aprailov N.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.20, sa.29, ss.4929-4936, 2006 (SCI-Expanded)

Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions

Afrailov M.

INFRARED PHYSICS & TECHNOLOGY , cilt.45, sa.3, ss.169-175, 2004 (SCI-Expanded)

Optical Moisture Meter Based on GaInAsSb Led’s and Photodiodes

Akay C., Ahmetoğlu M., Özer M.

Romanian Journal Of Physics , cilt.49, sa.34, ss.251-256, 2004 (SCI-Expanded)

A ZnS-Si hetero-junction photodiode for short wavelength photon detection

Tapan İ., Afrailov M.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , sa.1-2, ss.92-96, 2003 (SCI-Expanded) Sürdürülebilir Kalkınma

Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature

Mikhailova M., Stoyanov N., Andreychuk O., Moiseev K., Andreev I., Yakovlev Y., et al.

IEE PROCEEDINGS-OPTOELECTRONICS , cilt.149, sa.1, ss.41-44, 2002 (SCI-Expanded)

Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures

Stoyanov N., Mikhailova M., Andreichuk O., Moiseev K., Andreev I., Afrailov M., et al.

SEMICONDUCTORS , cilt.35, sa.4, ss.453-458, 2001 (SCI-Expanded)

Temperature Dependence of Photo VAC of Vidicon Target on the Base of a-Si:H

Ahmetoğlu M., Tapan I., Bobohadjaev U.

Romanian Journal Of Physics , sa.27, ss.183-186, 2000 (SCI-Expanded)

Determination of the values of band-edge discontinuities ΔEv and ΔEc at the heterojunction of N-GaSb/n-GaInAsSb isotype structures by photovoltaic method

Afrailov M., Mikhailova M., Rahimov N.

Turkish Journal of Physics , cilt.21, sa.12, ss.1229-1232, 1997 (SCI-Expanded) Sürdürülebilir Kalkınma

NARROW-GAP TYPE-II HETEROJUNCTIONS MADE OF GASB-INAS SOLID-SOLUTIONS

AFRAILOV M., BARANOV A., DMITRIEV A., MIKHAILOVA M., SMORCHKOVA Y., TIMCHENKO I., et al.

SOVIET PHYSICS SEMICONDUCTORS-USSR , cilt.24, sa.8, ss.876-882, 1990 (SCI-Expanded)

UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF 2-3,5 MU-M

ANDREEV I., AFRAILOV M., BARANOV A., MIKHAILOVA M., MOISEEV K., TIMCHENKO I., et al.

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , cilt.16, sa.4, ss.27-32, 1990 (SCI-Expanded)

LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE

ANDREEV I., AFRAILOV M., BARANOV A., MARINSKAYA N., MIRSAGATOV M., MIKHAILOVA M., et al.

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , cilt.15, sa.17, ss.71-76, 1989 (SCI-Expanded)

SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M

ANDREEV I., AFRAILOV M., BARANOV A., KONNIKOV S., MIRSAGATOV M., MIKHAILOVA M., et al.

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , cilt.15, sa.7, ss.15-19, 1989 (SCI-Expanded)

GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS

ANDREEV I., AFRAILOV M., BARANOV A., MIRSAGATOV M., MIKHAILOVA M., YAKOVLEV Y.

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , cilt.14, sa.11, ss.986-991, 1988 (SCI-Expanded)

AVALANCHE MULTIPLICATION IN PHOTODIODE STRUCTURES, BASED ON GAINASSB SOLID-SOLUTIONS

ANDREEV I., AFRAILOV M., BARANOV A., MIRSAGATOV M., MIKHAILOVA M., YAKOVLEV Y.

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , cilt.13, sa.8, ss.481-485, 1987 (SCI-Expanded)

PHOTODIODES BASED ON GAINASSB/GAALASSB SOLID-SOLUTIONS

ANDREEV I., AFRAILOV M., BARANOV A., DANILCHENKO V., MIRSAGATOV M., MIKHAILOVA M., et al.

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , cilt.12, sa.21, ss.1311-1315, 1986 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler

OPTICAL MOISTURE METER BASED on GaInAsSb LED's and PHOTODIODES

AHMETOĞLU M., AKAY C., ÖZER M.

ROMANIAN JOURNAL IN PHYSICS , cilt.49, ss.251-256, 2004 (Hakemli Dergi)

DARK CURRENT-VOLTAGE CHARACTERISTICS of a DOUBLE TYPE II HETEROJUNCTION BASED on ISOTYPE N+-GaSb/n0-GaInAsSb/N+-GaAlAsSb STRUCTURES

AHMETOĞLU M., ÖZER M., APRAİLOV N.

ROMANIAN JOURNAL IN PHYSICS , cilt.49, ss.257-264, 2004 (Hakemli Dergi)

InP/GaXIn1-XAs1-YPY LED DİYOTUN KARANLIK AKIM MEKANİZMASININ İNCELENMESİ

ÖZER M., AHMETOĞLU M.

Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi , cilt.8, sa.2, ss.207-210, 2004 (Hakemli Dergi)

DARK CURRENT ANALYSIS of ISOTYPE N-GaSb/n-GaInAsSb SINGLE HETEROJUNCTIONS

AHMETOĞLU M., ÖZER M., PİLİÇER E.

ROMANIAN JOURNAL IN PHYSICS , cilt.48, ss.197-202, 2003 (Hakemli Dergi)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler

Photodiodes for detection of IR radiation from WGM lasers

Ahmetoğlu M., Kunitsyna E., Andreev I., Konovalov G., Yakovlev Y., Lebiadok Y., et al.

ALT(Advanced Laser Technology) KONGRESİ -2019, Praha, Çek Cumhuriyeti, 15 - 20 Eylül 2019

Mid-Infrared Photonics: LEDs and Photodiodes for Sensing Applications

Kunıtsyna E., Andreev I., Grebenshchıkova E., Ilınskaya N., Ivanov E., Konovalov G., et al.

International Conference on Photonics Research (INTERPHOTONICS 2018), Antalya, Türkiye, 9 - 12 Ekim 2018

THE ELECTRİCAL AND OPTİCAL CHARACTERİZATİON OF ELECTRODEPOSİTED Ni /n-GaAs SCHOTTKY BARRİER DİODES

Batmaz T., Kirezli B., Şafak Hacıismailoğlu M., Alper M., Ahmetoğlu M.

rd International Conference on Organic Electronic Material Technologies (OEMT2018), Kırklareli, Türkiye, 20 - 22 Eylül 2018

ELECTRICAL AND OPTICAL PROPERTIES OF PHOTODIODE STRUCTURES FORMED BY SURFACE POLYMERIZATION OF P (EGDMA-VPCA)/SWCNT FILMS ON n-Si

Kirazlı B., GÜCÜYENER İ., KARA A., AHMETOĞLU M.

3rd International Conference on Organic Electronic Material Technologies (OEMT2018), Kırklareli, Türkiye, 20 - 22 Eylül 2018, ss.308-322

PHOTOELECTRICAL PROPERTIES OF Ag/n-GaAs SCHOTTKY DIODES

Batmaz T., Kirezli B., Hacıismailoğlu M. C., Ahmetoğlu M.

3rd International Conference on Organic Electronic Material Technologies, Kırklareli, Türkiye, 20 - 22 Eylül 2018

Electrical and Optical Properties ofPhotodiode Structures Formed by Surface Polymerization of P(EGDMAVPCA)/SWCNT Films on N-GaAs

Kirezli B., AHMETOĞLU M., KARA A.

3rd International Conference on Organic Electronic Material Technologies(OEMT2018), 20 - 22 Eylül 2018

Poly Ethylene glycol dimethacrylate co 1 Vinyl 1 2 4 triazole carbon nanotube single walled n GaAs Diode Formed by Surface Polymerization

AHMETOĞLU M., KARA A., KUCUR B.

2nd International Conference on Computational and Experimental Science and Engineering ICCESEN-2015, 14 - 19 Ekim 2015

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