SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler
N+-GaSb / no-GaInAsSb / P+-GaSb type ii heterojunction photodiodes with low radiation damage
Optoelectronics and Advanced Materials, Rapid Communications
, cilt.12, ss.517-520, 2018 (SCI-Expanded)
The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs schottky barrier diode
Optoelectronics and Advanced Materials, Rapid Communications
, cilt.10, ss.825-830, 2016 (SCI-Expanded)
Electrical characteristics of Al/n-type GaAs schottky barrier diodes at room temperature
Optoelectronics and Advanced Materials, Rapid Communications
, cilt.8, ss.309-310, 2014 (SCI-Expanded)
Electrical properties of GaAs-GaAlAs near infrared light emitting diodes
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.6, ss.782-784, 2012 (SCI-Expanded)
The electrical characterization of electrodeposited Ni thin film on silicon: Schottky Barrier diodes
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.6, ss.304-306, 2012 (SCI-Expanded)
Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.4, ss.441-444, 2010 (SCI-Expanded)
Photoelectrical properties of InP-InGaAsP heterojunction avalanche photodiodes
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.3, sa.6, ss.608-611, 2009 (SCI-Expanded)
Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.3, sa.6, ss.604-607, 2009 (SCI-Expanded)
Electron-hole interaction in spherical quantum dots of nanoheterostructures
Optoelectronics and Advanced Materials, Rapid Communications
, cilt.3, sa.3, ss.163-165, 2009 (SCI-Expanded)
Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.10, sa.10, ss.2507-2510, 2008 (SCI-Expanded)
Photoelectrical characteristic of isotype N+-GaSb / no-GaInAsSb / N+- GaAlAsSb type II heterojunctions
Journal of Optoelectronics and Advanced Materials
, cilt.10, sa.10, ss.2511-2514, 2008 (SCI-Expanded)
Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.9, sa.11, ss.3567-3570, 2007 (SCI-Expanded)
Dark currents in the uncooled InAs / InAsSbP photodiodes for the spectral range 1.6 - 3.5 μm
Journal of Optoelectronics and Advanced Materials
, cilt.9, sa.11, ss.3567-3570, 2007 (SCI-Expanded)
Temperature Dependence of Photo VAC of Vidicon Target on the Base of a-Si:H
Romanian Journal Of Physics
, sa.27, ss.183-186, 2000 (SCI-Expanded)
UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF 2-3,5 MU-M
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI
, cilt.16, sa.4, ss.27-32, 1990 (SCI-Expanded)
LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI
, cilt.15, sa.17, ss.71-76, 1989 (SCI-Expanded)
SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI
, cilt.15, sa.7, ss.15-19, 1989 (SCI-Expanded)
GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI
, cilt.14, sa.11, ss.986-991, 1988 (SCI-Expanded)
AVALANCHE MULTIPLICATION IN PHOTODIODE STRUCTURES, BASED ON GAINASSB SOLID-SOLUTIONS
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI
, cilt.13, sa.8, ss.481-485, 1987 (SCI-Expanded)
PHOTODIODES BASED ON GAINASSB/GAALASSB SOLID-SOLUTIONS
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI
, cilt.12, sa.21, ss.1311-1315, 1986 (SCI-Expanded)
Diğer Dergilerde Yayınlanan Makaleler
OPTICAL MOISTURE METER BASED on GaInAsSb LED's and PHOTODIODES
ROMANIAN JOURNAL IN PHYSICS
, cilt.49, ss.251-256, 2004 (Hakemli Dergi)
DARK CURRENT-VOLTAGE CHARACTERISTICS of a DOUBLE TYPE II HETEROJUNCTION BASED on ISOTYPE N+-GaSb/n0-GaInAsSb/N+-GaAlAsSb STRUCTURES
ROMANIAN JOURNAL IN PHYSICS
, cilt.49, ss.257-264, 2004 (Hakemli Dergi)
InP/GaXIn1-XAs1-YPY LED DİYOTUN KARANLIK AKIM MEKANİZMASININ İNCELENMESİ
Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi
, cilt.8, sa.2, ss.207-210, 2004 (Hakemli Dergi)
DARK CURRENT ANALYSIS of ISOTYPE N-GaSb/n-GaInAsSb SINGLE HETEROJUNCTIONS
ROMANIAN JOURNAL IN PHYSICS
, cilt.48, ss.197-202, 2003 (Hakemli Dergi)
Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar
Photodiodes for detection of IR radiation from WGM lasers
ALT(Advanced Laser Technology) KONGRESİ -2019, Praha, Çek Cumhuriyeti, 15 - 20 Eylül 2019
Mid-Infrared Photonics: LEDs and Photodiodes for Sensing Applications
International Conference on Photonics Research (INTERPHOTONICS 2018), Antalya, Türkiye, 9 - 12 Ekim 2018
THE ELECTRİCAL AND OPTİCAL CHARACTERİZATİON OF ELECTRODEPOSİTED Ni /n-GaAs SCHOTTKY BARRİER DİODES
rd International Conference on Organic Electronic Material Technologies (OEMT2018), Kırklareli, Türkiye, 20 - 22 Eylül 2018
PHOTOELECTRICAL PROPERTIES OF Ag/n-GaAs SCHOTTKY DIODES
3rd International Conference on Organic Electronic Material Technologies, Kırklareli, Türkiye, 20 - 22 Eylül 2018
Electrical and Optical Properties ofPhotodiode Structures Formed by Surface Polymerization of P(EGDMAVPCA)/SWCNT Films on N-GaAs
3rd International Conference on Organic Electronic Material Technologies(OEMT2018), 20 - 22 Eylül 2018
Poly Ethylene glycol dimethacrylate co 1 Vinyl 1 2 4 triazole carbon nanotube single walled n GaAs Diode Formed by Surface Polymerization
2nd International Conference on Computational and Experimental Science and Engineering ICCESEN-2015, 14 - 19 Ekim 2015
Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
5th International Advances in Applied Physics and Materials Science Congress & Exhibition, 16 - 19 Nisan 2015
Temperature Dependence of Electrical Characteristics of Ag/N-GaAs Schottky Barrier Diodes
International Semiconductor Science and Technology Conference, İstanbul, Türkiye, 13 - 15 Ocak 2014