Photoelectrical properties of InP-InGaAsP heterojunction avalanche photodiodes


Ahmetoglu M. , Ozer M. , Kadirov O.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.3, no.6, pp.608-611, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 3 Issue: 6
  • Publication Date: 2009
  • Title of Journal : OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Page Numbers: pp.608-611
  • Keywords: Photoelectrical properties, Heterostructures, The tunneling current, PHOTO-DIODES, PHOTODETECTOR

Abstract

Photoelectrical properties and the spectrum of the avalanche multiplication factor versus the reverse voltage at room temperature have been studied for LPE grown for InP-In(x)Ga(1-x)AsyP(1-y) heterostructures. The tunneling current becomes substantial at peak junction electric fields as low as 10(5) V/m due to the small direct energy gaps and small effective masses of the structures tested. The process of breakdown in the investigated structures was of the avalanche type. The results found for the lowering of the tunneling current in the pre-breakdown region. The temperature coefficient of the breakdown voltage beta = (1/V-B).(dV(B)/dT) > 0 was determined in the temperature range 77-300 K and its value was found to be beta = 5.78 x 10(-4) K-1.