Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition

Ahmetoglu (Afrailov) M., Alper M., Safak M., Erturk K., Gurpinar B., Kocak F., ...More

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, no.4, pp.818-821, 2007 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Publication Date: 2007
  • Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.818-821
  • Keywords: electrodeposition, Schottky diodes, electrical properties, DEPOSITION, HYDROGEN, SURFACES
  • Bursa Uludag University Affiliated: Yes

Abstract

In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.