Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition


Ahmetoglu (Afrailov) M. , Alper M., Safak M., Erturk K., Gurpinar B., Kocak F. , ...More

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.9, no.4, pp.818-821, 2007 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 9 Issue: 4
  • Publication Date: 2007
  • Title of Journal : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Page Numbers: pp.818-821
  • Keywords: electrodeposition, Schottky diodes, electrical properties, DEPOSITION, HYDROGEN, SURFACES

Abstract

In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.