Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development


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Olkun A., Kaplan H. K., Akay S. K., Ahmetoğlu M., Pat S., Erdogan N.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.374, 2024 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 374
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1016/j.sna.2024.115466
  • Dergi Adı: SENSORS AND ACTUATORS A-PHYSICAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

An innovative approach has been explored to fabricate a high-performance photodiode in semiconductor device production, utilizing the thermal evaporation technique to grow GaN thin films. Structural analyzes were conducted on both as-deposited and annealed samples, and their properties were determined using various characterization techniques, including FESEM, XRD, XPS, Hall effect, photoluminescence, and UV-Vis spectrophotometer measurements. Valuable information has been gained about the potential of this alternative approach for fabricating GaN-based electronic devices. In this study, Al/n+-GaN/n-Si/Ag (as-deposited GaN) and Al/n-GaN/n-Si/Ag (annealed GaN) structures have been fabricated. It was found that the device produced from the as-deposited GaN thin film exhibited better performance than the annealed one. The isotype heterojunction n+-GaN/n-Si photodiode exhibited exceptional performance in detecting NIR light at a wavelength of 1050 nm under a 0 V bias. It has a full-width at half-maximum (FWHM) value of 120 nm and achieved a photoresponsivity value of 355 mA/W at a light output of 10 mW/cm(2). It is further supported by its external quantum efficiency of 42% and detectivity value of 6.93x10(11) Jones at the peak wavelength and very fast response speed with similar to 33 mu s rise/fall times. These findings highlight the potential of photodiode as an efficient narrow-band in the NIR region.