Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method


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Kaplan H. K. , Akay S. K. , Ahmetoglu M.

SUPERLATTICES AND MICROSTRUCTURES, vol.120, pp.402-409, 2018 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 120
  • Publication Date: 2018
  • Doi Number: 10.1016/j.spmi.2018.05.055
  • Title of Journal : SUPERLATTICES AND MICROSTRUCTURES
  • Page Numbers: pp.402-409
  • Keywords: ZnS/Si, Heterojunction, Photoelectrical, Photoluminescence, TVA, THIN-FILMS, OPTICAL-PROPERTIES, SILICON, SI, DEPOSITION, PHOTOLUMINESCENCE, REFLECTIVITY, THICKNESS, DIODE, GAAS

Abstract

ZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV-Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.