Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method
SUPERLATTICES AND MICROSTRUCTURES, cilt.120, ss.402-409, 2018 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 120
- Basım Tarihi: 2018
- Doi Numarası: 10.1016/j.spmi.2018.05.055
- Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.402-409
- Anahtar Kelimeler: ZnS/Si, Heterojunction, Photoelectrical, Photoluminescence, TVA, THIN-FILMS, OPTICAL-PROPERTIES, SILICON, SI, DEPOSITION, PHOTOLUMINESCENCE, REFLECTIVITY, THICKNESS, DIODE, GAAS
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Bursa Uludağ Üniversitesi Adresli: Evet
Özet
ZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV-Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.