Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m


Afrailov M.

INFRARED PHYSICS & TECHNOLOGY, vol.53, no.1, pp.29-32, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 53 Issue: 1
  • Publication Date: 2010
  • Doi Number: 10.1016/j.infrared.2009.08.005
  • Journal Name: INFRARED PHYSICS & TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.29-32
  • Keywords: Dark currents, Photodiode structures, Avalanche multiplication, Liquid-phase epitaxy (LPE), GROWTH
  • Bursa Uludag University Affiliated: Yes

Abstract

The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. At the difference frequency, C-V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. it is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power-voltage sensitivity in the temperature range 77-300 K. (C) 2009 Elsevier B.V. All rights reserved