Electrical Properties of Photodiodes Based on p-GaSb/p-GaInAsSb/N-GaAlAsSb Heterojunctions
TECHNICAL PHYSICS LETTERS, cilt.34, sa.11, ss.937-940, 2008 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 34 Sayı: 11
- Basım Tarihi: 2008
- Doi Numarası: 10.1134/s1063785008110114
- Dergi Adı: TECHNICAL PHYSICS LETTERS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.937-940
- Bursa Uludağ Üniversitesi Adresli: Evet
Özet
We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various temperatures. A comparison of the theoretical results and experimental data showed that the tunneling charge transfer mechanism dominates at low temperatures (T < 150 K) under both forward and reverse bias conditions. The tunneling current becomes a determining factor at an electric field strength in the p-n junction of no less that 10(5) V/cm, which is related to a small bandgap width of the materials studied and low effective masses of electrons and holes.