Electrical Properties of Photodiodes Based on p-GaSb/p-GaInAsSb/N-GaAlAsSb Heterojunctions

Ahmetoglu M., Kaynak G., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

TECHNICAL PHYSICS LETTERS, cilt.34, sa.11, ss.937-940, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 34 Sayı: 11
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1134/s1063785008110114
  • Dergi Adı: TECHNICAL PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.937-940
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various temperatures. A comparison of the theoretical results and experimental data showed that the tunneling charge transfer mechanism dominates at low temperatures (T < 150 K) under both forward and reverse bias conditions. The tunneling current becomes a determining factor at an electric field strength in the p-n junction of no less that 10(5) V/cm, which is related to a small bandgap width of the materials studied and low effective masses of electrons and holes.