Electrical Properties of Photodiodes Based on p-GaSb/p-GaInAsSb/N-GaAlAsSb Heterojunctions

Ahmetoglu M., Kaynak G., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

TECHNICAL PHYSICS LETTERS, vol.34, no.11, pp.937-940, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 34 Issue: 11
  • Publication Date: 2008
  • Doi Number: 10.1134/s1063785008110114
  • Journal Name: TECHNICAL PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.937-940
  • Bursa Uludag University Affiliated: Yes

Abstract

We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various temperatures. A comparison of the theoretical results and experimental data showed that the tunneling charge transfer mechanism dominates at low temperatures (T < 150 K) under both forward and reverse bias conditions. The tunneling current becomes a determining factor at an electric field strength in the p-n junction of no less that 10(5) V/cm, which is related to a small bandgap width of the materials studied and low effective masses of electrons and holes.