Electrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb type-II heterojunctions


Ahmetoglu M. , Andreev I. A. , Kunitsyna E. V. , Mikhailova M. P. , Yakovlev Y. P.

SEMICONDUCTORS, vol.41, no.2, pp.150-154, 2007 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 41 Issue: 2
  • Publication Date: 2007
  • Doi Number: 10.1134/s1063782607020066
  • Title of Journal : SEMICONDUCTORS
  • Page Numbers: pp.150-154

Abstract

Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.