Electrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb type-II heterojunctions
SEMICONDUCTORS, vol.41, no.2, pp.150-154, 2007 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 41 Issue: 2
- Publication Date: 2007
- Doi Number: 10.1134/s1063782607020066
- Journal Name: SEMICONDUCTORS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.150-154
- Bursa Uludag University Affiliated: Yes
Abstract
Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.