Determination of Carrier Concentrations in P-GaSb/n-InGaAsSb Type II Misaligned Heterojunctions by the Conductivity-Magnetic Field Dependence


SENSOR LETTERS, vol.11, no.1, pp.202-204, 2013 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 1
  • Publication Date: 2013
  • Doi Number: 10.1166/sl.2013.2804
  • Journal Name: SENSOR LETTERS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.202-204


We present results in studying narrow-gap misaligned heterojunctions based on InxGa1-x,AsySb1-y/GaSb solid solutions with a composition close to In As (x >= 0.80, E-g = 0.26 eV at T = 300 K). Unusual asymmetric electrical properties of the heterostructures (N-n, P-p, N-p and P-n) as well as their energy band diagrams are discussed. The ohmic behaviour of P-GaSb/n-InGaAsSb structure and diode-like I-V characteristics of the N-p, N-n and P-p junctions have been observed in the temperature region from 4.2 K up to 300 K. Concentration of the P-n structure with ohmic behavior was determined by the conductivity-magnetic field dependence.