The determination of series resistance and interface state density distributions of Au/p-type GaAs schottky barrier diodes

Asimov A., Ahmetoglu (Afrailova) M., Kucur B., Ozer M., Guzel T.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.7, ss.490-493, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 7
  • Basım Tarihi: 2013
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.490-493
  • Anahtar Kelimeler: Gaas schottky barrier, Series resistance interface state density
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The electronic and interface state density distribution properties obtained from current-voltage (I-V) and capacitance- voltage (C-V) characteristics of Au/p-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The forward bias I-V of SBDs have been studied at room temperature. SBD parameters such as ideality factor n, series resistance (RS) determined by Cheung's functions and Schottky barrier height, Φbo, are investigated as functions of temperature. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.76-2.16 and 2.2-1.8 Ω and 0.53-0.72 eV, respectively. The diode shows non-ideal I-V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor.