The determination of series resistance and interface state density distributions of Au/p-type GaAs schottky barrier diodes

Asimov A., Ahmetoglu (Afrailova) M., Kucur B., Ozer M., Guzel T.

Optoelectronics and Advanced Materials, Rapid Communications, vol.7, pp.490-493, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 7
  • Publication Date: 2013
  • Journal Name: Optoelectronics and Advanced Materials, Rapid Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.490-493
  • Keywords: Gaas schottky barrier, Series resistance interface state density
  • Bursa Uludag University Affiliated: Yes


The electronic and interface state density distribution properties obtained from current-voltage (I-V) and capacitance- voltage (C-V) characteristics of Au/p-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The forward bias I-V of SBDs have been studied at room temperature. SBD parameters such as ideality factor n, series resistance (RS) determined by Cheung's functions and Schottky barrier height, Φbo, are investigated as functions of temperature. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.76-2.16 and 2.2-1.8 Ω and 0.53-0.72 eV, respectively. The diode shows non-ideal I-V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor.