The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs schottky barrier diode

Ahmetoglu (Afrailov) M., Kirsoy A., Asimov A., Kucur B.

Optoelectronics and Advanced Materials, Rapid Communications, vol.10, pp.825-830, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10
  • Publication Date: 2016
  • Journal Name: Optoelectronics and Advanced Materials, Rapid Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.825-830
  • Keywords: Conducting polymers, Ideality factor, Schottky barrier diode, Series resistance
  • Bursa Uludag University Affiliated: Yes

Abstract

© 2016, National Institute of Optoelectronics. All rights reserved.We fabricated the Au/Meh-PPV:PCBM/n-type GaAs Schottky barrier diodes (SBDs). Then we investigated Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode at room temperature. MEH-PPV:PCBM (in a mass ratio 1:4) used as interfacial layer between metal and semiconductor layers. Here, MEH-PPV is poly [2-methoxy-5-(ethylhexyloxy)-1,4-phenylenevinylene] and PCBM is [6,6]-phenyl-61C-butric acid methyl ester). SBD parameters such as ideality factor, barrier height and series resistance were obtained from I-V and C-V measurements. Also, Cheung functions and Norde Method were used to evaluate the I-V characteristics and to determine the characteristic parameters of the Schottky diode. The diode parameters such as ideality factor, barrier heights and series resistance were found as 4.39-4.54 and 0.57-0.63 eV and 51-53 Ω respectively. Also the interface states energy distribution of the diode was determined and found as 1.09 x 1012 eV-1cm-2 at (Ec-0.352) eV to 2.94 x 1011 eV-1cm-2 at (Ec-0.436) eV.