Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m


Ahmetoglu (Afrailov) M. , Andreev I. A. , Kunitsyna E. V. , Moiseev K. D. , Mikhailova M. P. , Yakovlev Y. P.

INFRARED PHYSICS & TECHNOLOGY, vol.55, no.1, pp.15-18, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 55 Issue: 1
  • Publication Date: 2012
  • Doi Number: 10.1016/j.infrared.2011.07.006
  • Title of Journal : INFRARED PHYSICS & TECHNOLOGY
  • Page Numbers: pp.15-18
  • Keywords: III-V semiconductors, Dark currents, Spectral sensetivity, Photodiode structures, Liquid phase epitaxy (LPE), PHOTODETECTOR, GROWTH, INAS

Abstract

The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism. (C) 2011 Elsevier B.V. All rights reserved.