Photoelectrical characteristic of isotype N+-GaSb / no-GaInAsSb / N+- GaAlAsSb type II heterojunctions

AHMETOĞLU M., ÖZER M. H., Kadirov O., Boydedayev S.

Journal of Optoelectronics and Advanced Materials, cilt.10, sa.10, ss.2511-2514, 2008 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 10
  • Basım Tarihi: 2008
  • Dergi Adı: Journal of Optoelectronics and Advanced Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2511-2514
  • Anahtar Kelimeler: İsotype heterostructures, Photocurrent sign, Photoelectrical characteristics
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

Photoelectrical characteristics and energy diagrams have been studied for LPE grown isotype heterostructures latticematched to GaSb substrates. The photocurrent sign dependence on photon energy as a function of forward bias in isotype N+-GaSb/no-GalnAsSb/N+-GaAlAsSb heterojunctions due to hole confinement at the type II interface is observed and discussed. This effect is due to modulation of the barrier transparency at the interface limiting the tunnel transitions of the conduction electrons and to the localization of photoholes in the potential well at the type II interface. The sign reversal of the photocurrent on photon energy as a function of applied voltage takes place only on the forward bias.