Dark currents and impact ionization coefficients in the InP-InGaAsP double heterostructures

Ozer M., Ahmetoglu M., Aprailov N.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.20, sa.29, ss.4929-4936, 2006 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 20 Sayı: 29
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1142/s0217979206035709
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.4929-4936
  • Anahtar Kelimeler: dark currents, impact ionization coefficients, AVALANCHE PHOTO-DIODES, PHOTODETECTOR
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The dependence of reverse-biased leakage current on both voltage and temperature for InP-InxGa1-xAsyP1-yDH (double heterostructures) has been analyzed. We find that at the whole of the temperature range and at a wide range of reverse bias voltages, the reverse current varies exponentially with applied voltage, indicating that the band-to-band tunneling current mechanism prevails. An agreement is obtained between theory and experimental results. The tunneling current becomes substantial at peak junction electric fields as low as 10(5) V/m due to the small direct energy gaps and small effective masses of the structures tested. The process of breakdown in the investigated structures was of the avalanche type. The impact ionization coefficients in InxGa1-xAsyP1-y have been experimentally determined for composition x = 0.68.