Electrical and optical properties of Schottky diodes fabricated by electrodeposition of Ni films on n-GaAs

HACIİSMAİLOĞLU M. C., AHMETOĞLU M., ŞAFAK HACIİSMAİLOĞLU M., ALPER M., Batmaz T.

Sensors and Actuators A: Physical, cilt.347, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 347
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.sna.2022.113931
  • Dergi Adı: Sensors and Actuators A: Physical
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Electrodeposition, GaAs, Ni, Photodiode, Schottky diode, CAPACITANCE-VOLTAGE, BARRIER HEIGHT, HYDROGEN, CONTACTS, PLOT
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

© 2022 Elsevier B.V.In this paper, we report electrical and optical characteristics of the Schottky diodes fabricated by electrodeposition of nickel onto n-GaAs substrate from 0.125 M NiSO4 + 0.25 M H3BO3 + 0.25 M Na2SO4 solution. The electrodeposition was performed at room temperature and at − 1.5 V vs. SCE. Electrical and optical properties were measured in the temperature range of 200–360 K. Dark and light current-voltage (I-V) characteristics were investigated. Ideality factor, n and zero-bias barrier height, ϕb were calculated and found to be almost constant in this temperature range. For room temperature, these values were obtained as 1.05 and 0.70 eV, respectively. Illuminated I-V characteristics were also investigated and they showed that the fabricated device could operate in photovoltaic regime. Open-circuit voltage, Voc was found to be 0.24 V for the diode under 20 mW/cm2 illumination.