Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m


Afrailov M.

THIN SOLID FILMS, vol.520, no.15, pp.5014-5017, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 520 Issue: 15
  • Publication Date: 2012
  • Doi Number: 10.1016/j.tsf.2012.03.014
  • Title of Journal : THIN SOLID FILMS
  • Page Numbers: pp.5014-5017
  • Keywords: Dark currents, Type II heterojunctions, Band alignment, Liquid phase epitaxy, Photovoltaic characteristics, III-V semiconductors, SPECTRAL RANGE

Abstract

The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied. (C) 2012 Elsevier B.V. All rights reserved.