Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature


Mikhailova M., Stoyanov N., Andreychuk O., Moiseev K., Andreev I., Yakovlev Y., ...More

IEE PROCEEDINGS-OPTOELECTRONICS, vol.149, no.1, pp.41-44, 2002 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 149 Issue: 1
  • Publication Date: 2002
  • Doi Number: 10.1049/ip-opt:20020348
  • Journal Name: IEE PROCEEDINGS-OPTOELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.41-44
  • Bursa Uludag University Affiliated: Yes

Abstract

The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.