Electrical properties of GaAs-GaAlAs near infrared light emitting diodes


AHMETOĞLU M. , Kucur B., GÜCÜYENER İ.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.6, pp.782-784, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 6
  • Publication Date: 2012
  • Title of Journal : OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Page Numbers: pp.782-784

Abstract

The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.