Electrical properties of GaAs-GaAlAs near infrared light emitting diodes

AHMETOĞLU M., Kucur B., GÜCÜYENER İ.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.6, ss.782-784, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 6
  • Basım Tarihi: 2012
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.782-784
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.