Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures

Ahmetoglu (Afrailov) M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.10, sa.10, ss.2507-2510, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 10
  • Basım Tarihi: 2008
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2507-2510
  • Anahtar Kelimeler: Current flow mechanisms, High temperature region, Type II staggered-lineup heterojunctions, II HETEROJUNCTIONS, ELECTRICAL-PROPERTIES, MU-M, LASERS
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown GaSb/GaInAsSb/GaAlAsSb heterostructures lattice-matched to GaSb substrates. The epitaxial layers have shown a good surface morphology and straight interface lines. The dark current mechanisms were investigated at several temperatures. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling current becomes substantial at peak junction electric fields as low as 10(4) V/cm due to the small direct energy gaps and small effective masses of the structure tested.