Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures


Ahmetoglu (Afrailov) M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.10, no.10, pp.2507-2510, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 10
  • Publication Date: 2008
  • Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2507-2510
  • Keywords: Current flow mechanisms, High temperature region, Type II staggered-lineup heterojunctions, II HETEROJUNCTIONS, ELECTRICAL-PROPERTIES, MU-M, LASERS
  • Bursa Uludag University Affiliated: Yes

Abstract

Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown GaSb/GaInAsSb/GaAlAsSb heterostructures lattice-matched to GaSb substrates. The epitaxial layers have shown a good surface morphology and straight interface lines. The dark current mechanisms were investigated at several temperatures. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling current becomes substantial at peak junction electric fields as low as 10(4) V/cm due to the small direct energy gaps and small effective masses of the structure tested.