Electrical Properties Inorganic-on-Organic Hybrid GaAs/Graphene Oxide Schottky Barrier Diode
Optoelectronics And Advanced Materials-Rapid Communications, ss.108-114, 2016 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Basım Tarihi: 2016
- Dergi Adı: Optoelectronics And Advanced Materials-Rapid Communications
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.108-114
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Bursa Uludağ Üniversitesi Adresli: Evet
Özet
The Au88Ge12 alloy/n-type GaAs(100)/Graphene Oxide (GO)/Au Schottky barrier diode has been fabricated. GO has been prepared by Hummers method and deposited on the GaAs substrate by spraying method. Schottky diode was investigated under dark and light intensity by the current–voltage (I–V) characteristics of the heterojunction. Thermionic current mechanism above the barrier has been detected by current–voltage measurements. It was found that the barrier height increases and the ideality factor decreases with light intensity. The obtained results indicate that GaAs/GO diode can be used as a photosensor in optoelectronic applications. Also, Schottky diode has been measured by capacitance–voltage (C–V) and conductance– voltage (G–V) in the frequency range from 10 kHz to 1 MHz at room temperature.