Dark currents in the uncooled InAs / InAsSbP photodiodes for the spectral range 1.6 - 3.5 μm

AHMETOĞLU M.

Journal of Optoelectronics and Advanced Materials, cilt.9, sa.11, ss.3567-3570, 2007 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Özet
  • Cilt numarası: 9 Sayı: 11
  • Basım Tarihi: 2007
  • Dergi Adı: Journal of Optoelectronics and Advanced Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3567-3570
  • Anahtar Kelimeler: Dark currents, Liquid phase epitaxy (LPE), Photodiode structures
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 μrn are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1/C2 ∼V, and the impurity concentration in the weakly doped region was (5-7)×1015 cm -3 at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes.