Dark currents in the uncooled InAs / InAsSbP photodiodes for the spectral range 1.6 - 3.5 μm


Journal of Optoelectronics and Advanced Materials, vol.9, no.11, pp.3567-3570, 2007 (SCI-Expanded) identifier

  • Publication Type: Article / Abstract
  • Volume: 9 Issue: 11
  • Publication Date: 2007
  • Journal Name: Journal of Optoelectronics and Advanced Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.3567-3570
  • Keywords: Dark currents, Liquid phase epitaxy (LPE), Photodiode structures
  • Bursa Uludag University Affiliated: Yes


The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 μrn are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1/C2 ∼V, and the impurity concentration in the weakly doped region was (5-7)×1015 cm -3 at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes.