Electrical properties of Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diodes formed by surface polymerization of Single Walled Carbon Nanotubes

AHMETOĞLU M., KARA A., TEKİN N., Beyaz S., KÖÇKAR H.

THIN SOLID FILMS, cilt.520, sa.6, ss.2106-2109, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 520 Sayı: 6
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.tsf.2011.08.066
  • Dergi Adı: THIN SOLID FILMS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2106-2109
  • Anahtar Kelimeler: Metal semiconductor-structure, Schottky barrier, Single Walled Carbon Nanotube, n-vinyl imidazole, ADSORPTION
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

In this paper we report the electrical characteristics of the Schottky diodes formed by surface polymerization of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes on n-Si The Single Walled Carbon Nanotubes were synthesized by CVD method. The main electrical properties of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si have been investigated through the barrier heights, the ideality factors and the impurity density distribution, by using current-voltage and reverse bias capacitance voltage characteristics. Electrical measurements were carried out at room temperature. Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.61 +/- 0.02 eV and 0.72 +/- 0.02 eV obtained from both current-voltage and capacitance-voltage measurements at room temperature, respectively. (C) 2011 Elsevier B.V. All rights reserved.