ACTA PHYSICA POLONICA A, vol.130, no.1, pp.206-208, 2016 (SCI-Expanded)
Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.