Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m


Ahmetoglu M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.9, no.11, pp.3567-3570, 2007 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 9 Issue: 11
  • Publication Date: 2007
  • Title of Journal : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Page Numbers: pp.3567-3570
  • Keywords: dark currents, photodiode structures, liquid phase epitaxy (LPE)

Abstract

The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1/C-2 similar to V, and the impurity concentration in the weakly doped region was (5-7)x10(15) cm(-3) at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes.