Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions


Afrailov M.

INFRARED PHYSICS & TECHNOLOGY, vol.45, no.3, pp.169-175, 2004 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 3
  • Publication Date: 2004
  • Doi Number: 10.1016/j.infrared.2003.09.001
  • Title of Journal : INFRARED PHYSICS & TECHNOLOGY
  • Page Numbers: pp.169-175
  • Keywords: isotype structures, type II heterojunctions with staggered band alignment, photo-response, dark current

Abstract

Dark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias. (C) 2003 Elsevier B.V. All rights reserved.