INFRARED PHYSICS & TECHNOLOGY, vol.45, no.3, pp.169-175, 2004 (SCI-Expanded)
Dark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias. (C) 2003 Elsevier B.V. All rights reserved.