Electrical characteristics of Al/n-type GaAs schottky barrier diodes at room temperature

Asimov A., Ahmetoglu M., Kucur B., Gucuyener I.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.8, ss.309-310, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8
  • Basım Tarihi: 2014
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.309-310
  • Anahtar Kelimeler: I-V characteristics, Schottky barrier diode
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The current-voltage (I -V) characteristics of metal-semiconductor Al/n-GaAs (MS) Schottky diodes were measured at room temperature (300 K). In addition, capacitance-voltage-frequency (C-V-f) characteristics are investigated by considering the interface states (Nss) at frequency 1 MHz. SBD parameters such as ideality factor n, the series resistance (Rs) determined from Cheung's functions and Schottky barrier height, Φbo, are investigated as functions of temperature. Ideality factor, barrier height and series resistance values were found as 2.93-3.51, 0.58-1.47 eV and 0.80-0.59Ω, respectively. The diode shows non-ideal I -V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I -V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor. The interface distribution profile (Nss) as a function of (Ec-Ess) was extracted from the forward-bias I -V measurements by taking into account the bias dependence of the effective barrier height and series resistance (Rs) for the Schottky diodes. The value of NSS obtained 1.92x1013(eV)-1cm-2.