Determination of the parameters for the back-to-back switched Schottky barrier structures

Ahmetoglu M., Akay S. K.

CURRENT APPLIED PHYSICS, vol.10, no.2, pp.652-654, 2010 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 2
  • Publication Date: 2010
  • Doi Number: 10.1016/j.cap.2009.08.012
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.652-654
  • Keywords: Metal-semiconductor-metal structures, Schottky barrier, Gallium arsenide, CONTACTS, DIODE, SEMICONDUCTORS, HEIGHT, GAAS


The Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.