Determination of the parameters for the back-to-back switched Schottky barrier structures

Ahmetoglu M., Akay S. K.

CURRENT APPLIED PHYSICS, cilt.10, sa.2, ss.652-654, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 2
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.cap.2009.08.012
  • Dergi Adı: CURRENT APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.652-654
  • Anahtar Kelimeler: Metal-semiconductor-metal structures, Schottky barrier, Gallium arsenide, CONTACTS, DIODE, SEMICONDUCTORS, HEIGHT, GAAS
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.