Electrical properties of n-Si /Cu Schottky diodes formed by electrodeposition

AHMETOĞLU M., ALPER M., Safak M., Erturk K., Gurpinar B., KOÇAK F., ...More

Journal of Optoelectronics and Advanced Materials, vol.9, no.4, pp.818-821, 2007 (SCI-Expanded) identifier

  • Publication Type: Article / Abstract
  • Volume: 9 Issue: 4
  • Publication Date: 2007
  • Journal Name: Journal of Optoelectronics and Advanced Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.818-821
  • Keywords: Electrical properties, Electrodeposition, Schottky diodes
  • Bursa Uludag University Affiliated: Yes

Abstract

In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n- Si (111) from 0.2 M CuSO 4 5H2O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si /Cu diode current-voltage characteristics display low reverse- bias leakage currents and average barrier heights of 0.59 ±0.02 eV and 0.67 ±0.02 eV obtained from both I -V and C - V measurements at room temperature, respectively.