Electrical properties of n-Si /Cu Schottky diodes formed by electrodeposition
Journal of Optoelectronics and Advanced Materials, vol.9, no.4, pp.818-821, 2007 (SCI-Expanded, Scopus)
- Publication Type: Article / Abstract
- Volume: 9 Issue: 4
- Publication Date: 2007
- Journal Name: Journal of Optoelectronics and Advanced Materials
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.818-821
- Keywords: Electrical properties, Electrodeposition, Schottky diodes
- Bursa Uludag University Affiliated: Yes
Abstract
In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n- Si (111) from 0.2 M CuSO 4 5H2O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si /Cu diode current-voltage characteristics display low reverse- bias leakage currents and average barrier heights of 0.59 ±0.02 eV and 0.67 ±0.02 eV obtained from both I -V and C - V measurements at room temperature, respectively.