Electrical and Optical Characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb Heterostructure Photodiode

Ahmetoglu M., Kucur B., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

ACTA PHYSICA POLONICA A, vol.127, no.4, pp.1007-1009, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 127 Issue: 4
  • Publication Date: 2015
  • Doi Number: 10.12693/aphyspola.127.1007
  • Journal Name: ACTA PHYSICA POLONICA A
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1007-1009
  • Bursa Uludag University Affiliated: Yes

Abstract

In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.