Electrical and Optical Characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb Heterostructure Photodiode

Ahmetoglu, MUHİTDİN; Kucur, B.; Andreev, I.; Kunitsyna, E.; Mikhailova, M.; Yakovlev, Y.

doi:10.12693/aphyspola.127.1007

Electrical and Optical Characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb Heterostructure Photodiode

Atıf İçin Kopyala

Ahmetoglu M., Kucur B., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

ACTA PHYSICA POLONICA A, cilt.127, sa.4, ss.1007-1009, 2015 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 127 Sayı: 4
Basım Tarihi: 2015
Doi Numarası: 10.12693/aphyspola.127.1007
Dergi Adı: ACTA PHYSICA POLONICA A
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.1007-1009
Bursa Uludağ Üniversitesi Adresli: Evet

Özet

In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.