Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb

Ahmetoglu (Afrailov) M.

THIN SOLID FILMS, vol.516, no.6, pp.1227-1231, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 516 Issue: 6
  • Publication Date: 2008
  • Doi Number: 10.1016/j.tsf.2007.06.003
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1227-1231
  • Keywords: isotype structures, type II heterojunctions, band alignment, dark current, liquid phase epitaxy, III-V quaternary compounds, ROOM-TEMPERATURE, SPECTRAL RANGE, MU-M, PHOTODIODES, BARRIERS
  • Bursa Uludag University Affiliated: Yes


Current flow mechanisms have been studied for liquid phase epitaxy grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the N-n isotype heterostructures were investigated in detail at several temperatures. It is shown that both the type II staggered and misaligned heterojunctions can behave as Schottky diodes and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. These measurements establish that the reverse current in both (staggered and misaligned) investigated structures are determined mainly by tunneling mechanism. The theoretical relations for reverse dark current in staggered lineup isotype heterostructures have been developed. (C) 2007 Elsevier B.V. All rights reserved.