Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode


Kucur B., Ahmetoglu M. , Andreev I. A. , Kunitsyna E. V. , Mikhailova M. P. , Yakovlev Y. P.

ACTA PHYSICA POLONICA A, vol.129, pp.767-769, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 129
  • Publication Date: 2016
  • Doi Number: 10.12693/aphyspola.129.767
  • Title of Journal : ACTA PHYSICA POLONICA A
  • Page Numbers: pp.767-769

Abstract

In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.