Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode

Kucur B., Ahmetoglu M., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

ACTA PHYSICA POLONICA A, cilt.129, ss.767-769, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 129
  • Basım Tarihi: 2016
  • Doi Numarası: 10.12693/aphyspola.129.767
  • Dergi Adı: ACTA PHYSICA POLONICA A
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.767-769
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.