Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode


Kucur B., Ahmetoglu M., Andreev I. A. , Kunitsyna E. V. , Mikhailova M. P. , Yakovlev Y. P.

ACTA PHYSICA POLONICA A, vol.129, pp.767-769, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 129
  • Publication Date: 2016
  • Doi Number: 10.12693/aphyspola.129.767
  • Journal Name: ACTA PHYSICA POLONICA A
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.767-769
  • Bursa Uludag University Affiliated: Yes

Abstract

In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.