The electrical characterization of electrodeposited Ni thin film on silicon: Schottky Barrier diodes

AHMETOĞLU M., Tekgul A., ALPER M., Kucur B.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.6, ss.304-306, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 6
  • Basım Tarihi: 2012
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.304-306
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

A Ni/n-Si Schottky barrier diode was produced by electrodeposition technique from the electrolyte containing nickel ions under galvanostatic control. The deposition was carried out in a three-electrode cell at room temperature. The electrical characteristics of the Schottky diodes have been investigated using current-voltage (l-V) and capacitance-voltage (C-V) measurements. Ni/n-Si/AuSb diode current-voltage characteristics display low reverse bias leakage currents. The barrier height and ideality factor (n) were obtained 0.60 eV and 3.28 respectively. The high ideality factor value was attributed to oxide layer at the metal semiconductor interface.