Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition

Ahmetoglu M., Erturk K.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.10, sa.2, ss.298-301, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 2
  • Basım Tarihi: 2008
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.298-301
  • Anahtar Kelimeler: electrodeposition, Schottky barrier, temperature dependence, GAAS SCHOTTKY DIODES, DEPOSITION, HYDROGEN
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

Electroplating technique is especially interesting due to its low cost and high quality of deposits being extensively used in industry. In this work, Cu film is electrodeposited on n-type Si (100) substrate using constant current mode. The electrical properties of Cu/n-Si were investigated at several temperatures. The current-voltage analysis based on the thermionic emission theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperatures.