Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition

Ahmetoglu M., Erturk K.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.10, no.2, pp.298-301, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 2
  • Publication Date: 2008
  • Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.298-301
  • Keywords: electrodeposition, Schottky barrier, temperature dependence, GAAS SCHOTTKY DIODES, DEPOSITION, HYDROGEN
  • Bursa Uludag University Affiliated: Yes

Abstract

Electroplating technique is especially interesting due to its low cost and high quality of deposits being extensively used in industry. In this work, Cu film is electrodeposited on n-type Si (100) substrate using constant current mode. The electrical properties of Cu/n-Si were investigated at several temperatures. The current-voltage analysis based on the thermionic emission theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperatures.