JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.10, no.2, pp.298-301, 2008 (SCI-Expanded)
Article / Article
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Science Citation Index Expanded (SCI-EXPANDED), Scopus
electrodeposition, Schottky barrier, temperature dependence, GAAS SCHOTTKY DIODES, DEPOSITION, HYDROGEN
Bursa Uludag University Affiliated:
Electroplating technique is especially interesting due to its low cost and high quality of deposits being extensively used in industry. In this work, Cu film is electrodeposited on n-type Si (100) substrate using constant current mode. The electrical properties of Cu/n-Si were investigated at several temperatures. The current-voltage analysis based on the thermionic emission theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperatures.