Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition


Ahmetoglu M., Erturk K.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.10, no.2, pp.298-301, 2008 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 2
  • Publication Date: 2008
  • Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.298-301
  • Keywords: electrodeposition, Schottky barrier, temperature dependence, GAAS SCHOTTKY DIODES, DEPOSITION, HYDROGEN

Abstract

Electroplating technique is especially interesting due to its low cost and high quality of deposits being extensively used in industry. In this work, Cu film is electrodeposited on n-type Si (100) substrate using constant current mode. The electrical properties of Cu/n-Si were investigated at several temperatures. The current-voltage analysis based on the thermionic emission theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperatures.