The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode

Asimov A., Ahmetoglu M., Kirsoy A., Ozer M., Yasin M.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.11, sa.2, ss.214-218, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 2
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1166/jno.2016.1881
  • Dergi Adı: JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.214-218
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

We investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height Phi(b0) values of the diode were found to be 3.40 and Phi(b0) = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.