Research Information System
SOVIET PHYSICS SEMICONDUCTORS-USSR, vol.24, no.8, pp.876-882, 1990 (SCI-Expanded)
"Broken-gap" type II heterojunctions were made from narrow-gap GaSb-Ga(x)In(1-x)As(1-y)Sb(y) (x = 0.11, y = 0.21, E(g) = 0.26 eV at 300 K) structures where the solid solution was isoperiodic with the GaSb substrate, were grown and investigated. A study was made of electrical and photoelectric properties of heterostructures of four types: N-n, P-p, p-n, and P-p. Ohmic behavior of the P-n structure of the GaSb-GaInAsSb type was observed at temperatures T = 300-4.2 K and the rectifying characteristics of N-n, N-p, and P-p structures were studied. The energy band diagrams of these structures were analyzed. A semiclassical approximation was used to estimate the parameters of quantum wells and of a double layer formed in the vicinity of the N-n+ contact at a type II heterojunction. An analysis was made of the mechanism of flow of the tunnel current in a heterostructure of this kind and calculations were made of the current-voltage characteristics. The calculated results were in good agreement with the experimental data.