Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter
ACTA PHYSICA POLONICA A, cilt.125, sa.2, ss.411-413, 2014 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 125 Sayı: 2
- Basım Tarihi: 2014
- Doi Numarası: 10.12693/aphyspola.125.411
- Dergi Adı: ACTA PHYSICA POLONICA A
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.411-413
- Bursa Uludağ Üniversitesi Adresli: Evet
Özet
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8,mu m wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100,mu m diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.