Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter


Kucur B., Ahmetoglu M. , Andreev I. A. , Kunitsyna E. V. , Mikhailova M. P. , Yakovlev Y. P.

ACTA PHYSICA POLONICA A, vol.125, no.2, pp.411-413, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 125 Issue: 2
  • Publication Date: 2014
  • Doi Number: 10.12693/aphyspola.125.411
  • Title of Journal : ACTA PHYSICA POLONICA A
  • Page Numbers: pp.411-413

Abstract

GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8,mu m wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100,mu m diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.