Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter


Kucur B., Ahmetoglu M., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P.

ACTA PHYSICA POLONICA A, vol.125, no.2, pp.411-413, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 125 Issue: 2
  • Publication Date: 2014
  • Doi Number: 10.12693/aphyspola.125.411
  • Journal Name: ACTA PHYSICA POLONICA A
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.411-413
  • Bursa Uludag University Affiliated: Yes

Abstract

GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8,mu m wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100,mu m diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.