Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb double heterojunctions


Afrailov M. , Ozer M.

7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Montpellier, France, 1 - 04 June 2004, vol.2, pp.1393-1398 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 2
  • Doi Number: 10.1002/pssc.200460464
  • City: Montpellier
  • Country: France
  • Page Numbers: pp.1393-1398

Abstract

The electrical and optical properties of a double type II heterojunction in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered hetero-junction can behave as Schottky diodes and the dark current-voltage (I-V) characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The qualitative comparison of experimental results with theory shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. A mechanism of photocurrent amplification in isotype N+-n(0)-N+ heterojunctions due to hole confinement at the type II interface is observed and discussed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.