Determination of the values of band-edge discontinuities ΔEv and ΔEc at the heterojunction of N-GaSb/n-GaInAsSb isotype structures by photovoltaic method

Afrailov M., Mikhailova M., Rahimov N.

Turkish Journal of Physics, cilt.21, sa.12, ss.1229-1232, 1997 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 21 Sayı: 12
  • Basım Tarihi: 1997
  • Dergi Adı: Turkish Journal of Physics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1229-1232
  • Bursa Uludağ Üniversitesi Adresli: Hayır

Özet

Values of the potential jumps in the valence band and in the conduction band have been determined by photovoltaic method for N-GaSb/n-GaInAsSb isotype structures fabricated by liquid-phase epitaxy. Measurements of the ratio of photoresponse value to R0 at temperatures over the range 90-360 K have shown a value of potential jump in valence band as much as 0,1 eV. Energy band diagrams have been established for N-GaSb/n-GaInAsSb junctions which show evidence that the junctions corresponds to II-type "staggered" heterojunctions. © Tübi̇tak.