Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures


Ahmetoglu (Afrailov) M.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.4, pp.441-444, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 4 Issue: 4
  • Publication Date: 2010
  • Journal Name: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.441-444
  • Keywords: Current flow mechanisms, Type II staggered-lineup heterojunctions, Type II staggered-lineup heterojunctions, II HETEROJUNCTIONS, RADIATION
  • Bursa Uludag University Affiliated: Yes

Abstract

Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures with a low sensitivity area. An experimental investigation of current-voltage characteristics has been done in the temperature range from 77-210K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge the key role at low temperatures under both forward and reverse biases.