Gaussian Distribution of inhomogeneous barrier height in Au/n-GaP (100) Schottky barrier diodes

Ozer M., Guzel T., Asimov A., Ahmetoglu (Afrailov) M.

Journal of Optoelectronics and Advanced Materials, vol.16, pp.606-611, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 16
  • Publication Date: 2014
  • Journal Name: Journal of Optoelectronics and Advanced Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.606-611
  • Keywords: Schottky contacts, Schottky Barrier Height, Gaussian Distribution Inhomogeneities, TEMPERATURE-DEPENDENCE, CURRENT TRANSPORT, ELECTRICAL CHARACTERISTICS, MECHANISM, CONTACTS
  • Bursa Uludag University Affiliated: Yes


The current¡Vvoltage (I-V) measurements of Au/n-GaP Schottky barrier diodes (SBD) were carried out in the temperature range of 80¡V375 K. The values of zero-bias barrier height (øBO) and ideality factor (øBO) ranged from 0.29 eV and 3.85 (80K) to 0.82 eV and 1.16 (375K), respectively. Such behavior of and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian Distribution (GD) of barrier hights (BHs) at Au/n-GaP interface. The vs plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights,and values of = øBo,97 eV and = δo.10 V for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. Thus a modified ln (l0/T2) - q2δ 2o/2k2T2vs 1000/T plot has given mean barrier height and Richardson constant (øBo) as 1.95 eV and 0.054 A cm-2 K-2, respectively. The temperature dependence of the I-V characteristics of the Au/n-GaP Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with GD of the Schottky barrier heights (SBHs).