Afrailov, M. 2010. Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m. INFRARED PHYSICS & TECHNOLOGY , vol.53, no.1 , 29-32.

Afrailov, M., (2010). Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m. INFRARED PHYSICS & TECHNOLOGY , vol.53, no.1, 29-32.

Afrailov, MUHİTDİN. "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m," INFRARED PHYSICS & TECHNOLOGY , vol.53, no.1, 29-32, 2010

Afrailov, MUHİTDİN. "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m." INFRARED PHYSICS & TECHNOLOGY , vol.53, no.1, pp.29-32, 2010

Afrailov, M. (2010) . "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m." INFRARED PHYSICS & TECHNOLOGY , vol.53, no.1, pp.29-32.

@article{article, author={MUHİTDİN AHMETOĞLU}, title={Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 mu m}, journal={INFRARED PHYSICS & TECHNOLOGY}, year=2010, pages={29-32} }