Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties

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Olkun A., Kaplan H. K., Sarsıcı S., Akay S. K., Erdoğan N.

MATERIALS LETTERS, vol.376, no.137276 , pp.1-4, 2024 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 376 Issue: 137276
  • Publication Date: 2024
  • Doi Number: 10.1016/j.matlet.2024.137276
  • Journal Name: MATERIALS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.1-4
  • Bursa Uludag University Affiliated: Yes

Abstract

 This study investigates the impact of γ-irradiation on the material and device properties of Al/n-GaN/p-Si/Al heterojunction diodes. GaN thin films were deposited on glass and p-Si substrates using thermal evaporation, followed by annealing at 450 ◦ C. The diodes were subjected to γ-irradiation doses of 0, 3, and 6 kGy. X-ray diffraction (XRD) measurements revealed significant structural changes, including phase transitions influenced by radiation. Electrical characteristics were assessed through current–voltage (I-V) measurements within the ± 2 V range. Notably, the ideality factor for the annealed diodes improved from 6.60 to 4.62 and 3.85 with increased γ-irradiation. The barrier height was determined to be 0.85 eV, and it did not exhibit a significant change upon γ-irradiation dose. The results provided valuable insights into the response of heterojunction diodes to radiation exposure, aiding in the understanding and potential improvement of the radiation resistance of GaN-based electronic devices.