Olkun, A. Et Al. 2024. Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties. MATERIALS LETTERS , vol.376, no.137276 , 1-4.

Olkun, A., Kaplan, H. K., Sarsıcı, S., Akay, S. K., & Erdoğan, N., (2024). Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties. MATERIALS LETTERS , vol.376, no.137276 , 1-4.

Olkun, Ali Et Al. "Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties," MATERIALS LETTERS , vol.376, no.137276 , 1-4, 2024

Olkun, Ali Et Al. "Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties." MATERIALS LETTERS , vol.376, no.137276 , pp.1-4, 2024

Olkun, A. Et Al. (2024) . "Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties." MATERIALS LETTERS , vol.376, no.137276 , pp.1-4.

@article{article, author={Ali Olkun Et Al. }, title={Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties}, journal={MATERIALS LETTERS}, year=2024, pages={1-4} }