Lattice and surface engineering in Zn1-x-yBxFeyO thin films (x=0, 0.01; y=0, 0.06): Insights into optical response, electronic energy levels and semiconducting dynamics
Physica E: Low-Dimensional Systems and Nanostructures, cilt.183, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 183
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.physe.2026.116610
- Dergi Adı: Physica E: Low-Dimensional Systems and Nanostructures
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Applied Science & Technology Source, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO)
- Anahtar Kelimeler: B and Fe doping, Electronic band structure, Mott-Schottky analyses, Optical conductivity, Optical properties, Thin film engineering, ZnO thin films
- Bursa Uludağ Üniversitesi Adresli: Evet
Özet
In this study, undoped, single-doped (6% Fe or 1% B), and co-doped (6% Fe–1% B) ZnO thin films are synthesized via the sol–gel method and deposited on glass and ITO substrates using dip-coating. Structural analysis confirms the preservation of the hexagonal wurtzite phase, while doping significantly modified crystallite size, lattice strain, and defect density. Notably, Fe–B co-doping reduces the crystallite size to ∼6–8 nm, indicating enhanced nanocrystallinity and structural disorder. Morphological investigations reveal homogeneous dopant distribution and refined granular structures in co-doped films. Optical results show that doping improves light–matter interaction without significantly altering the wide bandgap (3.22–3.26 eV). Enhanced visible light absorption and increased optical conductivity in the UV region are observed, particularly for FeB:ZnO, indicating improved charge carrier generation. Additionally, dielectric analysis reveals increased polarizability and electronic transition probability. Energy-band analysis shows that doping effectively tunes the electronic structure, shifting the Fermi level from −6.25 eV to −5.55 eV while preserving n-type conductivity. The Fe–B co-doped film exhibits a significant negative shift in flat-band potential (−0.861 V), suggesting enhanced interfacial charge transfer. These findings highlight the potential of co-doped ZnO thin films for optoelectronic applications, particularly as electron transport layers in perovskite solar cells.