In this work, it is aimed to improve the device performance of traditional Au/n-Si Schottky Diodes (SDs) with an innovative approach using the irradiated PTCDA interfacial layer. For this reason, first PTCDA powders were irradiated with different electron beam (E-Beam) doses of 30kGy, 60kGy and 100kGy and the results were analyzed by FTIR method. Unirradiated and irradiated PTCDA powders with E-Beam were evaporated on n-Si substrate via organic evaporator. Current-Voltage (I-V) characteristics of unirradiated and irradiated Au/PTCDA/n-Si SDs with PTCDA interfacial layers irradiated with different E-Beam doses of 30kGy, 60kGy and 100kGy were carried out between +/- 3V at room temperature. The ideality factor (n), Schottky barrier height (Phi(Bo)), rectification ratio (DO), series resistance (R-s) and shunt resistance (R-sh) of devices were calculated from current-voltage (I-V) results. It is experimentally seen that performance of Au/PTCDA/n-Si SD irradiated with 30 kGy has better results when we compared unirradiated Au/PTCDA/n-Si SD. It has been observed that the I-V characteristics of the Au/PTCDA/n-Si SD are highly influenced by irradiation and the device performance can be improved with appropriate irradiation dose.