We have fabricated Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes (SBDs) to investigate the effect of organic interfacial layer on the main electrical characteristics. Zn doped poly(vinyl alcohol) (PVA:Zn) was successfully deposited on n-Si substrate by using the electrospinning system and surface morphology of PVA:Zn was presented by SEM images. The current-voltage (I-V) characteristics of these SBDs have been investigated at room temperature. The experimental results show that interfacial layer enhances the device performance in terms of ideality factor (n), zero-bias barrier height (Phi(BO)), series resistance (R-s), and shunt resistance (R-sh) with values of 1.38, 0.75 eV, 97.64 Omega, and 203 MO whereas those of Au/n-Si SBD are found as 1.65, 0.62 eV, 164.15 Omega and 0.597 M Omega, respectively. Also, this interfacial layer at metal/semiconductor (M/S) interface leads to a decrease in the magnitude of leakage current and density of interface states (N-ss). The values of N-ss range from 1.36 x 10(12) at E-c-0.569 eV to 1.35 x 10(13) eV(-1) cm(-2) at E-c-0.387 eV for Au/PVA:Zn/n-Si SBD and 3.34 x 10(12) at E-c-0.560 eV to 1.35 x 10(13) eV(-1) cm(-2) at E-c-0.424 eV for Au/n-Si SBD. The analysis of experimental results reveals that the existence of PVA:Zn interfacial layer improves the performance of such devices. (C) 2013 Elsevier Ltd. All rights reserved.