Structural and electrical properties of NiO thin films on nanoporous Si fabricated by reactive DC sputtering


Hacıismailoğlu M. C., Doumbıa S., Ahmetoğlu M.

7th International Conference on Materials Science & Nanotechnology, Vienna, Avusturya, 15 - 16 Temmuz 2024, ss.36-37

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Vienna
  • Basıldığı Ülke: Avusturya
  • Sayfa Sayıları: ss.36-37
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

Nickel oxide (NiO) thin films were fabricated by using reactive DC magnetron sputtering onto the soda lime glass substrates. NiO coated glass substrates were used for structural analyses. High purity Ni target was used as Ni source. The coating was carried out under 80% Ar-20% O2 gas mixture at 10 mTorr total pressure with 470 V gun potential and 2 Å/s evaporation rate. After evaporation, thesesamples were annealed at 150 °C during 10, 20 and 30 min. The XRD measurements (Fig.1a) and the UV-VIS absorption spectra (Fig.1b) confine the NiO structure. Nanoporous Si (NPSi) structures were synthesized by the MACE method1 on one-side polished η-type Si (100) wafers. A 15-nm Cu film was thermally evaporated onto the whole surface of the polished side of the wafers. Cu source was 3N-grade copper pellets and deposition rate was 5 Å/s. The Cu-coated Si substrates were annealed at 150 °C in a tubular furnace under N2 stream to prevent the oxidation for 15 min. The etching step was conducted in a solution of HF, H2O2 and DI water at room temperature. The Cu film catalyzed the etching of the Si beneath it. The etching time was 30 min. The substrates were dipped into concentrated nitric acid solution to remove any Cu traces for 5 min after the etching. Then, NPSi substrates were loaded sputter system and coated by NiO, as mentioned above. Metal contacts were made by thermal evaporation using a mask, which have 1-mm diameter circular openings, onto NiO/n-type NPSi for the electrical characterization. These properties will also be discussed.