EFFECT OF THE HEAVY IONS TO THE SILICON DETECTORS


KILIÇ A.

ROMANIAN JOURNAL OF PHYSICS, vol.61, pp.885-891, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 61
  • Publication Date: 2016
  • Title of Journal : ROMANIAN JOURNAL OF PHYSICS
  • Page Numbers: pp.885-891

Abstract

Silicon particle detectors are used in several applications such as accelerators in high energy physics, space, nuclear physics experiments and medicine. Thereby, it is crucially important to understand the effects of various particles with different energies on performance of silicon detectors. In this study, it has been focused on recoil heavy ions (Z >= 3) produced by 50 to 500 MeV protons in silicon. In order to investigate the effects of the recoil heavy ions on silicon, it has been simulated some physical quantities such as variety, ranges, linear energy transfers (LET) and non-ionizing energy loss (NIEL) of the recoil heavy ions through GEANT4 (Geometry And Tracking) [1], FLUKA (FLUktuierende KAskade) [2] and SRIM [3] Monte Carlo tools.