Simulation of displacement damage for silicon avalanche photo-diodes

KILIÇ, ADNAN; Pilicer, Ercan; Tapan, İLHAN; Ozmutlu, Emin

doi:10.1016/j.nima.2011.05.073

Simulation of displacement damage for silicon avalanche photo-diodes

KILIÇ A., Pilicer E., Tapan İ., Ozmutlu E. N.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, sa.1, ss.70-72, 2011 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Basım Tarihi: 2011
Doi Numarası: 10.1016/j.nima.2011.05.073
Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.70-72
Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 x 10(13) n/cm(2) over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence. (C) 2011 Elsevier B.V. All rights reserved.