Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure

Erturk K., Bektore Y., Haciismailoglu M.

7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Montpellier, France, 1 - 04 June 2004, vol.2, pp.1428-1432 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 2
  • Doi Number: 10.1002/pssc.200460480
  • City: Montpellier
  • Country: France
  • Page Numbers: pp.1428-1432


We report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.